inchange semiconductor product specification silicon npn power transistors 2SC3970 2SC3970a description ? ? with to-220fa package ? high speed switching ?high v cbo ? wide area of safe operation applications ? for high breakdown voltate ,high-speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit 2SC3970 800 v cbo collector-base voltage 2SC3970a open emitter 900 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 8 v i c collector current (dc) 1.5 a i cm collector current-peak 3.0 a i b base current 0.5 a t c =25 ?? 25 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3970 2SC3970a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 500 v v cesat collector-emitter saturation voltage i c =0.6a; i b =0.17a 1.0 v v besat base-emitter saturation voltage i c =0.6a; i b =0.17a 1.5 v 2SC3970 v cb =800v; i e =0 i cbo collector cut-off current 2SC3970a v cb =900v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =0.6a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 1.0 | s t s storage time 3.0 | s t f fall time i c =0.6a; i b1 =0.17a i b2 =-0.34a;v cc =200v 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC3970 2SC3970a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC3970 2SC3970a
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